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1024-Bit EEPROM iButton
Memory Access
Data memory and registers are located in a linear
address space, as shown in Figure 5. The data memory
and the registers have unrestricted read access. The
DS1972 EEPROM array consists of 18 rows of 8 bytes
each. The first 16 rows are divided equally into four
memory pages (32 bytes each). These four pages are
the primary data memory. Each page can be individu-
ally set to open (unprotected), write protected, or
EPROM mode by setting the associated protection byte
in the register row. As a factory default, the entire data
memory is unprotected and its contents are undefined.
The last two rows contain protection registers and
reserved bytes. The register row consists of 4 protec-
tion-control bytes, a copy-protection byte, the factory
byte, and 2 user byte/manufacture ID bytes. The manu-
facturer ID can be a customer-supplied identification
code that assists the application software in identifying
the product with which the DS1972 is associated.
Contact the factory to set up and register a custom
manufacturer ID. The last row is reserved for future use.
It is undefined in terms of R/W functionality and should
not be used.
In addition to the main EEPROM array, an 8-byte
volatile scratchpad is included. Writes to the EEPROM
array are a two-step process. First, data is written to the
scratchpad and then copied into the main array. This
allows the user to first verify the data written to the
scratchpad prior to copying into the main array. The
device only supports full row (8-byte) copy operations.
For data in the scratchpad to be valid for a copy opera-
tion, the address supplied with a Write Scratchpad
command must start on a row boundary, and 8 full
bytes must be written into the scratchpad.
ADDRESS RANGE
0000h to 001Fh
0020h to 003Fh
0040h to 005Fh
0060h to 007Fh
0080h*
0081h*
0082h*
0083h*
0084h*
0085h
0086h
0087h
TYPE
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R
R/(W)
R/(W)
DESCRIPTION
Data Memory Page 0
Data Memory Page 1
Data Memory Page 2
Data Memory Page 3
Protection-Control Byte Page 0
Protection-Control Byte Page 1
Protection-Control Byte Page 2
Protection-Control Byte Page 3
Copy Protection Byte
Factory Byte. Set at Factory.
User Byte/Manufacturer ID
User Byte/Manufacturer ID
PROTECTION CODES
—
—
—
—
55h: Write Protect P0; AAh: EPROM Mode P0;
55h or AAh: Write Protect 80h
55h: Write Protect P1; AAh: EPROM Mode P1;
55h or AAh: Write Protect 81h
55h: Write Protect P2; AAh: EPROM Mode P2;
55h or AAh: Write Protect 82h
55h: Write Protect P3; AAh: EPROM Mode P3;
55h or AAh: Write Protect 83h
55h or AAh: Copy Protect 0080h:008Fh, and Any
Write-Protected Pages
AAh: Write Protect 85h, 86h, 87h;
55h: Write Protect 85h; Unprotect 86h, 87h
—
—
0088h to 008Fh — Reserved —
*Once programmed to AAh or 55h this address becomes read only. All other codes can be stored, but neither write protect the
address nor activate any function.
Figure 5. Memory Map
_______________________________________________________________________________________
7
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相关代理商/技术参数
DS1972-F5
制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit EEPROM iButton
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